The Science Fiction World of Xueba - Chapter 502

Pang Xuelin spent nearly an afternoon at the Biomedical Research Center, and proposed many useful modifications based on the dynamic APT parameters given by Shi Yi, Yang Heping, and Andrew White.

He basically uses dynamic APT technology every day in the Resident Evil world. He is well aware of the performance and various parameters of this device, so it is not surprising to give various useful opinions.

Shi Yi, Yang Heping, and Andrew White also didn’t care. Pang Xuelin’s fame, plus frequent contact with Pang Xuelin, they wouldn’t be surprised by any miracles in this guy.

Of course, for the dynamic APT technology, the three of them also have high hopes.

The cryo-electron microscopy technology can win the Nobel Prize in Chemistry, so the dynamic APT technology, which is more realistic than the cryo-electron microscopy technology, can undoubtedly also be obtained.

Moreover, Pang Xuelin has already won the Nobel Prize in Chemistry once, and the three of them can share a Nobel Prize.

Pang Xuelin spent an afternoon at the Biomedical Research Center and learned about the research and development of APT equipment. The next day, he went to the carbon-based chip research and development center led by Xu Xingguo.

At present, the development of global semiconductor materials is close to the physical limit. TSMC, the strongest in the field of integrated circuit foundry, has completed the commercial mass production of the 3 nanometer process, and the 2 nanometer process is also close to R&D.

SMIC, China’s strongest semiconductor manufacturer, is still stuck in the 7-nanometer process, which still has a gap of two generations from TSMC.

Before the Sino-U.S. trade war, the United States had initiated a comprehensive technical blockade against Huawei, claiming that any enterprise that used U.S. technology must not cooperate with Huawei.

It was not until the lithium-air battery was born that China relied on the huge advantages of lithium-air batteries to lift the technical blockade of Western countries, and the crisis facing Huawei was solved.

But even so, there is still a big gap between China and Western countries in the field of high-end manufacturing of integrated circuits.

Not to mention, asmex’s extreme ultraviolet lithography machine (EUV), which brings together the most advanced manufacturing technology in all western countries, can be called the most precise industrial product in human history.

Together with aero engines, it has become a jewel in the crown of industrial manufacturing.

In the era of silicon-based integrated circuits, Western countries have huge first-mover advantages, and it is difficult for China to compete with Western countries in this field.

At this point, even Pang Xuelin had no choice.

To allow him to make a breakthrough in theory and allow him to quickly raise the level of domestic industrial manufacturing, Pang Xuelin is also unable to do anything.

The gap in the silicon-based chip manufacturing process makes it difficult for China to catch up with Western developed countries in a short time.

However, there is no way to overtake in the silicon-based field, which does not mean that there is no other way.

Carbon nanotubes have been given high hopes by scientists.

This is closely related to its own characteristics.

First of all, although the size of the carbon nanotube chip is small, the ability to save energy and increase efficiency is stronger.

Carbon nanotubes are carbon materials that are rolled from a single layer of carbon atoms into a tube. They have excellent electrical conductivity, and the carbon reserves on the earth are very rich.

The diameter of carbon nanotubes can be made from several nanometers to tens of nanometers long according to different processes; the thickness of the tube wall is smaller, and the carbon nanotubes can be divided into single-wall carbon nanotubes and multi-wall carbon nanometers according to the number of carbon atoms in the wall layer In the case of the same degree of integration, carbon nanotube chips are smaller than silicon components.

At the same time, carbon nanotubes have extremely high toughness, can withstand bending, stretching and other stresses, and the delay of the electrical signal transmission process is very short. Therefore, from the physical properties of materials, carbon nanotubes have the potential to replace silicon chips.

Secondly, carbon materials have a variety of allotropes, in addition to carbon nanotubes, there are also well-known diamond, graphite, fullerene, activated carbon and so on.

Its conductive properties strongly depend on the structure, and it can be changed from an insulator to a semiconductor and from a semiconductor to a conductor.

Moreover, its conduction method and principle are different from traditional transistors, and it has stronger conductivity.

In addition, the existing transistors inevitably generate leakage current during the conduction process, and the leakage current will cause heat generation, and carbon nanotubes can avoid this problem, so the energy efficiency is relatively high.

In theory, the energy efficiency of carbon nanotube chips is expected to exceed the energy efficiency ratio of existing chips (60% to 70%).

The solution to the heat problem also reduces the pressure on the chip’s heat dissipation.

The power consumption of silicon transistors is very large. In a small chip space, heat generation is extremely serious. In order to prevent the chip from overheating and not working, it is also necessary to allocate part of the power consumption for heat dissipation of the chip, which increases the power consumption of the silicon transistor.

The carbon nanotube chip itself generates less heat, and the carbon nanotube itself has a high thermal conductivity, which effectively reduces the energy consumption for heat dissipation, so the energy efficiency of carbon nanotubes will be much higher than that of silicon. Transistor.

Worldwide, the earliest carbon nanotube device was fabricated by IBM. In 2014, it successfully prepared a carbon nanotube 20nm gate length device, but the performance of the device was much worse than expected.

In recent years, various foreign laboratories have claimed to prepare carbon nanotube devices with a gate length of 1 nm, but more of them are just gimmicks, and the actual performance is very poor.

After China’s research on carbon nanotube devices, after Pang Xuelin completed the mass production preparation of ultra-high purity electronic grade carbon nanotubes, the team led by Xu Xingguo began to dope in high-performance carbon nanotube (CMOS complementary metal oxide semiconductor) transistors without doping. In-depth research has been conducted on the preparation of hybrids and the polarity control of transistors, and there has been a lot of technical accumulation.

Among them, the carbon nanotube top-gate CMOS field effect transistor (corresponding to the 5 nanometer technology node) with a gate length of 10 nanometers prepared by the team has successfully overcome related problems such as device structure and manufacturing process.

Not only that, the performance of the prepared carbon nanotube device is far more than the internationally reported carbon nanotube device.

For the carbon tube transistor prepared by the conventional structure, when the gate length is less than 5 nanometers, it will be significantly affected by the short channel effect and tunneling leakage current. In the past, the fusion of high-dielectric gate dielectric film is difficult to effectively solve the leakage current The problem prevents the device from effectively shutting down.

The Xu Xingguo team switched to using graphene instead of metal as the source-drain contact of the carbon tube transistor, thereby effectively suppressing the short channel effect and direct source-drain tunneling.

And ~www.mtlnovel.com~ Since the switching of the carbon nanotube device with a length of 5 nanometers has only about 1 electron involved, the gate delay (42 femtoseconds) is close to the physical limit of the binary electronic switching device (40 femtoseconds, Determined by the Heisenberg uncertainty principle and Shannon-Von Neumann-Landauer law).

This is the first time that China has mastered the most advanced transistor technology in the world, and the overall technology is extremely mature. With the cost of carbon nanotubes falling and the yield of the process increasing, this technology is expected to become the most advanced chip manufacturing technology.

The mastery of this new technology is equivalent to the advantages of the most advanced silicon-based technology of more than six generations (20 years ahead), making the advantages of international chip giants no longer exist, and the domestic semiconductor manufacturing industry will not be far away. Overtaking in corners will be realized in the future.

In fact, Pang Xuelin met engineers from Huawei and SMIC in Xu Xingguo’s laboratory.

According to Xu Xingguo, the first generation of carbon-based chips will be mass-produced within the next year and will be first applied to Huawei’s 5G base station products.

As for the carbon-based chips on the consumer side, it is estimated that it will take another two years before large-scale applications in mobile phones, PCs and other fields.

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